general features v ds =700v,i d =7a r ds(on) <1.5 ? @ v gs =10v high density cell design for ultra low rdson fully characterized avalanche voltage and current good stability and uniformity with high e as excellent package for good heat dissipation special process technology for high esd capability application power switching application hard switched and high frequency circuits electronic ballast and transformer package marking and ordering information device marking device device package reel size tape width quantity to-220f - - - absolute maximum ratings (t c =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 700 v gate-source voltage v gs 30 v drain current-continuous i d 7 a drain current-continuous(t c =100 ) i d (100 ) 4.2 a pulsed drain current i dm 28 a maximum power dissipation p d w derating factor 0.20 w/ single pulse avalanche energy (note 5) e as 515 mj operating junction and st orage temperature range t j ,t stg -55 to 150 more semiconductor company limited http://www.moresemi.com 1/5 MSN7007F 700v(d-s) n-channel enhancement mode power mos fet MSN7007F MSN7007F lead free pin configuration 48 schematic diagram marking and pin assignment to-220f top view
thermal characteristic thermal resistance,junction-to-case (note 2) r jc 2.6 /w electrical characteristics (t c =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 700 - v zero gate voltage drain current i dss v ds =700v,v gs =0v - - 1 a gate-body leakage current i gss v gs =30v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2 4 v drain-source on-state resistance r ds(on) v gs =10v, i d =3.5a - 1.5 ? forward transconductance g fs v ds =40v,i d =3.5a 5.0 - - s dynamic characteristics (note4) input capacitance c lss - 1200 - pf output capacitance c oss - 450 - pf reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz - 100 - pf switching characteristics (note 4) turn-on delay time t d(on) - 65 - ns turn-on rise time t r - 85 - ns turn-off delay time t d(off) - 80 - ns turn-off fall time t f v dd =350v,i d =7a,r l =25 ? v gs =10v,r g =2.5 ? - 89 - ns total gate charge q g - 24 nc gate-source charge q gs - 6.1 nc gate-drain charge q gd v ds =560v,i d =7a, v gs =10v - 7.7 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =7.0a - 1.4 v diode forward current (note 2) i s - - 7.0 a reverse recovery time t rr - 320 ns reverse recovery charge qrr tj = 25c, if = 7.0a di/dt = 100a/ s (note3) - 2.4 forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production 5. e as condition: j=25 ,v dd =50v,v g =10v,l=0.5mh,rg=25 ? more semiconductor company limited http://www.moresemi.com 2/5 c - - MSN7007F 1.35
typical electrical and the rmal characteristics (curves) more semiconductor company limited http://www.moresemi.com 3/5 c , c a p a c i t a n c e ( p f ) i d , d r a i n c u r r e n t ( a ) i d , d r a i n c u r r e n t ( a ) v t h , n o r m a l i z e d g a t e - s o u r c e t h r e s h o l d v o l t a g e r d s ( o n ) , n o r m a l i z e d r d s ( o n ) , o n - r e s i s t a n c e ( o h m s ) v d s , d r a i n - t o - s o u r c e v o l t a g e ( v ) f i g u r e 1 . o u t p u t c h a r a c t e r i s t i c s v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) f i g u r e 2 . t r a n s f e r c h a r a c t e r i s t i c s v d s , d r a i n - t o - s o u r c e v o l t a g e ( v ) f i g u r e 3 . c a p a c i t a n c e t j , j u n c t i o n t e m p e r a t u r e ( c ) f i g u r e 5 . g a t e t h r e s h o l d v a r i a t i o n w i t h t e m p e r a t u r e c i s s c o s s c r s s 9 0 0 7 5 0 6 0 0 4 5 0 3 0 0 1 5 0 0 0 5 1 0 1 5 2 0 2 5 3 . 0 0 . 0 2 . 5 2 . 0 1 . 5 1 . 0 0 . 5 v g s = 1 0 v i d = 2 a - 1 0 0 - 5 0 0 5 0 1 0 0 1 5 0 2 0 0 1 . 3 1 . 2 1 . 1 1 . 0 0 . 9 0 . 8 0 . 7 0 . 6 v d s = v g s i d = 2 5 0 a - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 v s d , b o d y d i o d e f o r w a r d v o l t a g e ( v ) f i g u r e 6 . b o d y d i o d e f o r w a r d v o l t a g e v a r i a t i o n w i t h s o u r c e c u r r e n t t j , j u n c t i o n t e m p e r a t u r e ( c ) f i g u r e 4 . o n - r e s i s t a n c e v a r i a t i o n w i t h t e m p e r a t u r e i s , s o u r c e - d r a i n c u r r e n t ( a ) 0 . 4 0 . 6 0 . 8 1 . 0 1 0 0 1 0 - 1 1 0 1 1 . 2 1 . 6 1 . 4 v g s = 0 v 5 0 2 . 5 5 7 . 5 - 5 5 c 1 1 2 . 5 1 0 2 3 4 6 0 t j = 1 2 5 c 2 5 c 3 . 5 2 . 8 2 . 1 1 . 4 0 . 7 0 0 2 . 5 5 1 0 7 . 5 1 2 . 5 1 5 4 . 2 v g s = 4 v v g s = 1 0 , 9 , 8 , 6 v v g s = 5 v MSN7007F fig1 typical output characteristics, tc=25 fig 2 on-resistance vs. drain current and gate voltage fig 3 normalized on-resistance vs.temperature fig 4 typical source-drain diode forward voltage fig 5 maximum drain current vs.case temperature
more semiconductor company limited http://www.moresemi.com 4/5 c , c a p a c i t a n c e ( p f ) i d , d r a i n c u r r e n t ( a ) i d , d r a i n c u r r e n t ( a ) v t h , n o r m a l i z e d g a t e - s o u r c e t h r e s h o l d v o l t a g e r d s ( o n ) , n o r m a l i z e d r d s ( o n ) , o n - r e s i s t a n c e ( o h m s ) v d s , d r a i n - t o - s o u r c e v o l t a g e ( v ) f i g u r e 1 . o u t p u t c h a r a c t e r i s t i c s v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) f i g u r e 2 . t r a n s f e r c h a r a c t e r i s t i c s v d s , d r a i n - t o - s o u r c e v o l t a g e ( v ) f i g u r e 3 . c a p a c i t a n c e t j , j u n c t i o n t e m p e r a t u r e ( c ) f i g u r e 5 . g a t e t h r e s h o l d v a r i a t i o n w i t h t e m p e r a t u r e c i s s c o s s c r s s 9 0 0 7 5 0 6 0 0 4 5 0 3 0 0 1 5 0 0 0 5 1 0 1 5 2 0 2 5 3 . 0 0 . 0 2 . 5 2 . 0 1 . 5 1 . 0 0 . 5 v g s = 1 0 v i d = 2 a - 1 0 0 - 5 0 0 5 0 1 0 0 1 5 0 2 0 0 1 . 3 1 . 2 1 . 1 1 . 0 0 . 9 0 . 8 0 . 7 0 . 6 v d s = v g s i d = 2 5 0 a - 5 0 - 2 5 0 2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 v s d , b o d y d i o d e f o r w a r d v o l t a g e ( v ) f i g u r e 6 . b o d y d i o d e f o r w a r d v o l t a g e v a r i a t i o n w i t h s o u r c e c u r r e n t t j , j u n c t i o n t e m p e r a t u r e ( c ) f i g u r e 4 . o n - r e s i s t a n c e v a r i a t i o n w i t h t e m p e r a t u r e i s , s o u r c e - d r a i n c u r r e n t ( a ) 0 . 4 0 . 6 0 . 8 1 . 0 1 0 0 1 0 - 1 1 0 1 1 . 2 1 . 6 1 . 4 v g s = 0 v 5 0 2 . 5 5 7 . 5 - 5 5 c 1 1 2 . 5 1 0 2 3 4 6 0 t j = 1 2 5 c 2 5 c 3 . 5 2 . 8 2 . 1 1 . 4 0 . 7 0 0 2 . 5 5 1 0 7 . 5 1 2 . 5 1 5 4 . 2 v g s = 4 v v g s = 1 0 , 9 , 8 , 6 v v g s = 5 v MSN7007F fig 6 -1 maximum safe operating area fig 6 -2 maximum safe operating area fig 6 -3 maximum safe operating are
more semiconductor company limited http://www.moresemi.com 5/5 MSN7007F to-220f-3l package information
|
